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| DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK135A RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES * Suitable for use as RF amplifier in UHF TV tuner. * Low Crss : 0.02 pF TYP. * High Gps : 18 dB TYP. * Low NF : 2.7 dB TYP. PACKAGE DIMENSIONS in millimeters +0.1 0.4-0.05 +0.2 2.8-0.3 +0.2 1.5-0.1 2 +0.1 0.16-0.06 Drain to Source Voltage Gate1 to Source Voltage Gate2 to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDSX VG1S* VG2S* ID PT Tch Tstg 5 0 to 0.1 20 10 10 25 200 150 -65 to +150 *RL 10 k V V V mA mW C C 1 +0.1 0.6-0.05 5 +0.1 5 0.4-0.05 +0.2 1.1-0.1 0.8 4 (1.9) 1. Source 2. Drain 3. Gate 2 4. Gate 1 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) 2.90.2 (1.9) 0.95 0.95 5 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC Drain to Source Breakdown Voltage Drain Current Gate1 to Source Cutoff Voltage Gate2 to Source Cutoff Voltage Gate1 Reverse Current Gate2 Reverse Current Forward Transter Admittance SYMBOL BVDSX IDSS VG1S(off) VG2S(off) IG1SS IG2SS | yfs | 14 18 MIN. 20 0.01 6 -2.0 -0.7 20 20 TYP. MAX. UNIT V mA V V nA nA ms TEST CONDITIONS VG1S = VG2S = -2 V, ID = 10 A VDS = 5 V, VG2S = 4 V, VG1S = 0 VDS = 10 V, VG2S = 4 V, ID = 10 A VDS = 10 V, VG1S = 4 V, ID = 10 A VDS = 0, VG1S = 8 V, VG2S = 0 VDS = 0, VG2S = 8 V, VG1S = 0 VDS = 5 V, VG2S = 4 V, ID = 10 mA, f = 1 kHz VDS = 10 V, VG2S = 4 V, ID = 10 mA, f = 1 MHz Input Capacitance Output capacitance Reverse Transfer Capacitance Power Gain Noise Figure Ciss Coss Crss Gps* NF* 1.5 0.5 1.0 0.02 16 18 2.7 2.5 1.5 0.03 pF pF pF dB VDS = 10 V, VG2S = 4 V, ID = 10 mA, f = 900 MHz 4.5 dB IDSS Classification Class Marking IDSS L/LS* U65 0.01 to 2 K/KS* U66 1 to 6 * Old specification/New specification Document No. P10411EJ1V0DS00 (1st edition) (Previous No. TN-1758) Date Published August 1995 P Printed in Japan 3 +0.1 0.4-0.05 (c) 1995 3SK135A TYPICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 5 VG2S = 4 V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE PT - Total Power Dissipation - mW ID - Drain Current - mA 400 4 300 3 VG1S = 0 200 2 -0.1 V -0.2 V -0.3 V -0.4 V 100 1 0 25 50 75 100 125 0 10 VDS - Drain to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. GATE 1 TO SOURCE VOLTAGE 20 TA - Ambient Temperature - C DRAIN CURRENT vs. GATE 1 TO SOURCE VOLTAGE VDS = 10 V 20 | yfs | - Forward Transter Admittance - mS 25 25 VDS = 10 V f = 1 MHz 20 6V 4V |D - Drain Current - mA 15 6V 15 2V 10 4V 2V 10 1V 5 1V VG2S = 0 0 -1.0 0 VG1S - Gate1 to Source Voltage - V INPUT CAPACITANCE vs. DRAIN CURRENT VDS = 10 V f = 1 MHz +1.0 5 VG2S = 0 0 -1.0 0 VG1S - Gate1 to Source Voltage - V OUTPUT CAPACITANCE vs. GATE 2 TO SOURCE VOLTAGE VDS = 10 V f = 1 MHz 2 +1.0 4 3 ID = 10 mA at VG2S = 4 V 2 ID = 5 mA at VG2S = 4 V 1 Coss - Output Capacitance - pF Ciss - Input Capacitance - pF 1 ID = 10 mA at VG2S = 4 V ID = 5 mA at VG2S = 4 V 0 -1.0 0 1.0 2.0 3.0 4.0 0 -1.0 0 1.0 2.0 3.0 4.0 ID - Drain Current - mA VG2S - Gate2 to Source Voltage - V 2 3SK135A POWER GAIN AND NOISE FIGURE vs. GATE2 TO SOURCE VOLTAGE 20 8 Gps NF - Noise Figure - dB Gps - Power Gain - dB 10 6 0 NF f = 900 MHz IDS = 10 mA (at VDS = 10 V, VG2S = 4 V) IDS = 10 mA (at VDS = 5 V, VG2S = 3 V) 6.0 8.0 4 -10 2 -20 0 -2.0 0 2.0 4.0 VG2S - Gate2 to Source Voltage - V 3 3SK135A S-PARAMETER, Y-PARAMETER S1, Y1 CONDITION VDS = 10 V VG2S = 4 V IDS = 10 mA S1-MAG & ANGL FREQ. 50 100 200 300 400 500 600 700 800 900 1000 Yl-MAG & ANGL FREQ. 50 100 200 300 400 500 600 700 800 900 1000 S2, Y2 CONDITION VDS = 10 V VG2S = 4 V IDS = 5 mA 0.405 1.382 1.937 3.962 4.327 6.197 6.589 8.151 8.287 8.404 8.085 1.023 0.989 0.966 0.923 0.871 0.841 0.776 0.676 0.631 0.575 0.537 11 -2 -8 -11 -22 -23 -33 -34 -41 -43 -47 -49 1.820 1.758 1.778 1.758 1.758 1.718 1.738 1.718 1.698 1.660 1.567 21 173 165 153 139 128 113 101 88 76 64 48 0.002 0.002 0.003 0.003 0.008 0.017 0.034 0.058 0.089 0.130 0.172 12 86 102 56 167 -153 -160 -166 -178 173 160 142 1.023 0.977 0.977 0.966 0.933 0.912 0.902 0.891 0.881 0.881 0.891 22 0 -4 -7 -10 -11 -15 -15 -18 -21 -20 -34 11 125 85 80 77 69 71 62 53 47 44 46 17.780 17.940 18.399 19.044 20.003 20.688 21.986 23.697 24.190 23.916 22.726 21 -6 -9 -18 -26 -36 -45 -58 -69 -81 -94 -103 0.020 0.024 0.027 0.033 0.086 0.205 0.434 0.803 1.269 1.878 2.492 12 -93 -72 -115 2 43 42 35 25 16 2 -9 0.234 0.715 1.226 1.773 2.069 2.801 2.754 2.973 2.985 2.079 4.327 22 -176 71 80 78 68 67 60 58 59 65 90 S2-MAG & ANGL FREQ. 50 100 200 300 400 500 600 700 800 900 1000 1.023 0.989 0.966 0.933 0.891 0.851 0.794 0.684 0.624 0.556 0.501 11 -2 -8 -11 -22 -23 -34 -35 -43 -46 -51 -52 1.567 1.531 1.549 1.531 1.567 1.531 1.567 1.549 1.549 1.531 1.462 21 174 166 153 140 129 114 102 88 76 64 48 0.002 0.003 0.003 0.003 0.008 0.017 0.035 0.062 0.095 0.143 0.191 12 64 118 49 177 -148 -157 -161 -174 176 163 144 1.035 0.989 0.977 0.977 0.944 0.923 0.912 0.902 0.891 0.891 0.891 22 0 -4 -7 -10 -11 -15 -16 -19 -22 -22 -35 Y2-MAG & ANGL FREQ. 50 100 200 300 400 500 600 700 800 900 1000 0.411 1.385 1.940 3.946 4.259 6.358 6.724 8.534 8.961 9.289 8.676 11 126 85 80 79 73 72 64 55 48 43 43 15.215 15.540 16.026 16.402 17.533 18.279 19.600 21.366 22.388 22.717 21.911 21 -5 -8 -18 -24 -35 -43 -56 -67 -79 -92 -103 0.022 0.027 0.028 0.032 0.087 0.207 0.444 0.851 1.380 2.120 2.855 12 -115 -56 -122 13 48 46 41 31 21 7 -7 0.354 0.690 1.229 1.759 2.034 2.770 2.914 3.157 3.168 2.336 4.332 22 -178 80 80 82 71 69 64 62 61 67 90 4 3SK135A 900 MHz Gps AND NF TEST CIRCUIT VG2S (4 V) 1 000 pF 47 k 1 000 pF ~ 10 pF ~ 10 pF INPUT 50 L1 47 k RFC ~ 10 pF ~ 10 pF L2 OUTPUT 50 1 000 pF 1 000 pF L1, L2 35 x 5 x 0.2 mm VG1S VDD (10 V) VDS = 10 V, VG2S = 4 V, ID = 10 mA 5 3SK135A No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 2 |
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